3. 0 a 0.02 unit characteristic symbol 80 a v 250 pf 25 c/w -55 to +150 c sb320 ? sb3200 3.0 a schottky barrier diode feat ures ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d m echanical data ! case: do-201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version, m aximum ratings and electrical characteristics @t a =2 5c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rms reverse voltage v r( rms) a verage rectified output current @t l = 95c (note 1) i o non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m forward voltage @i f = 3.0a v fm p eak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0. 5 20 ma typical junction capacitance (note 2) c j typical thermal resistance (note 1) r ja operating and storage temperature range t j , t st g not e: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 sb320 ? sb3200 v sb320 sb330 sb340 sb350 sb360 sb380 sb3100 SB3150 sb3200 10 0. 5 0.75 0.85 0.92 v 20 14 30 21 40 28 50 35 60 42 80 56 100 70 150 105 200 140 z ibo seno electronic engineering co., ltd. www.senocn.com do-201 ad di m min max a 25. 4 ? b 8. 50 9.50 c 1. 20 1.30 d 5. 0 5.60 a ll dimensions in mm do-201 ad di m min max a 24. 5 ? b 7. 20 9.50 c 1. 10 1.30 d 5. 00 5.60 a ll dimensions in mm
0 16 32 48 64 80 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j 10 100 1000 0.1 11 0 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r f=1.0mhz t = 25 c j 0 20 40 60 80 100 120 140 i,instantaneousreversecurrent(ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f 100 2 of 2 sb320 ? sb3200 sb320 ? sb3200 sb320 ? sb340 sb350 ? sb360 sb380 ? sb3200 z ibo seno electronic engineering co., ltd. www.senocn.com 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) o, t , lead temperature ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0
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